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參數資料
| 型號： | HMMC-5027 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 放大器 |
| 英文描述： | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.1173 X 0.0303 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 542K |
| 代理商： | HMMC-5027 |
2
Applications
The HMMC-5027 series of traveling
wave ampliers are designed for use
as general purpose wideband power
stages in communication systems
and microwave instru-
mentation. They are ideally suited for
broadband applications
requiring a at gain response and
excellent port matches over a 2 to 26.5
GHz frequency range. Dynamic gain
control and low-frequency extension
capabilities are designed into these
devices.
DC Specications/Physical Properties1
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
IDSS
Saturated Drain Current
200
300
500
mA
(VDD = 8.0 V, VG1 = 0.0 V, VG2 = open circuit)
Vp
First Gate Pinch-Off Voltage
-2.2
-1.3
-0.5
volts
(VDD = 8.0 V, IDD = 30 mA, VG2 = open circuit)
VG2
Second Gate Self-Bias Voltage
1.8
volts
(VDD = 8.0 V, VG1 = 0.0 V)
(0.27 x V
DD
)
IDSOFF
First Gate Pinch-Off Current
7
mA
(VG1)
(VDD = 8.0 V, VG1 = -3.5 V, VG2= open circuit)
IDSOFF
Second Gate Pinch-Off Current
10
mA
(VG2)
(VDD = 5.0 V, VG1 = 0.0 V, VG2 = -3.5 V)
θch-bs
Thermal Resistance (Tbackside = 25°C)
28
°C/W
1 Measured in wafer form with T
chuck = 25°C. (Except θch-bs).
RF Specications1
(VDD = 8.0 V, IDD(Q) = 250 mA or IDSS, Zin = Zo = 50 )
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
BW
Guaranteed Bandwidth2
2
26.5
GHz
S21
Small Signal Gain
6
7
dB
S21
Small Signal Gain Flatness
±0.8
dB
RLin
Input Return Loss
-13
-10
dB
RLout
Output Return Loss
-11
-10
dB
S
12
Reverse Isolation
-28
-25
dB
P-1 dB
Output Power at 1 dB Gain
16.5
19
dBm
Compression
Psat
Saturated Output Power
18.5
21
dBm
H2
Second Harm. (2 <o<20),
-21
-18
dBc
[Po(o) = 21 dBm or P-1 dB,
whichever is less]
H3
Third Harm. (2 <o<20),
-32
-18
dBc
[Po(o) = 21 dBm or P-1 dB,
whichever is less]
NF
Noise Figure
11
dB
1 Small-signal data measured in wafer form with Tchuck = 25°C. Large-signal data measured on individual
devices mounted in an Agilent 83040 Series Modular Microcircuit Package @ TA = 25°C.
2 Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry.
Upper corner frequency -30 GHz.
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PDF描述 |
|---|---|
| HMMC-5032 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5032 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5033 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5038 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5040 | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5034 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:37-43 GHz Amplifier |
| HMMC-5038 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:38 GHz LNA |
| HMMC-5040 | 制造商:Agilent Technologies 功能描述:RF AMP CHIP SGL GP 40GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
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