參數(shù)資料
型號: HN58C257A
廠商: Hitachi,Ltd.
英文描述: 256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k字 ×8位))
中文描述: 256畝的EEPROM(32 KWord的× 8位)(256k的EEPROM(32K的字× 8位))
文件頁數(shù): 16/26頁
文件大小: 193K
代理商: HN58C257A
HN58C256A Series, HN58C257A Series
16
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write
cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each
additional byte load cycle must be started within 30
μ
s from the preceding falling edge of
WE
or
CE
.
When
CE
or
WE
is high for 100
μ
s after data input, the EEPROM enters write mode automatically and the
input data are written into the EEPROM.
Data
Polling
Data
polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read
mode during a write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the
EEPROM is performing a write operation.
RDY/
Busy
Signal (
only the HN58C257A series
)
RDY/
Busy
signal also allows status of the EEPROM to be determined. The RDY/
Busy
signal has high
impedance except in write cycle and is lowered to V
OL
after the first write signal. At the end of a write
cycle, the RDY/
Busy
signal changes state to high impedance.
RES
Signal (
only the HN58C257A series
)
When
RES
is low, the EEPROM cannot be read or programmed. Therefore, data can be protected by
keeping
RES
low when V
CC
is switched.
RES
should be high during read and programming because it
doesn't provide a latch function.
V
Program inhibit
CC
RES
Program inhibit
Read inhibit
Read inhibit
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