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參數(shù)資料
| 型號(hào)： | HN58C65FP-25 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
| 中文描述： | 8192字× 8位電可擦除和可編程的CMOS光盤(pán) |
| 文件頁(yè)數(shù)： | 5/16頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | HN58C65FP-25 |
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HN58C65 Series
5
DC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
10%)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input leakage current
I
LI
—
—
2
μ
A
V
= 5.5 V
Vin = 5.5 V
Output leakage current
I
LO
—
—
2
μ
A
V
= 5.5 V
Vout = 5.5/0.4 V
CE
= V
IH
,
CE
= V
CC
Iout = 0 mA
Duty = 100%
Cycle = 1
μ
s at
V
CC
= 5.5 V
Iout = 0 mA
Duty = 100%
Cycle = 250 ns at
V
CC
= 5.5 V
V
CC
current (Standby)
V
CC
current (Active)
I
CC1
I
CC2
—
—
1
mA
—
—
8
mA
—
—
25
mA
Input low voltage
V
IL
V
IH
V
OL
V
OH
–0.3
*1
—
0.8
V
Input high voltage
2.2
—
V
CC
+ 1
0.4
V
Output low voltage
—
—
V
I
OL
= 2.1 mA
I
OH
= –400
μ
A
Output high voltage
Note:
1. –1.0 V for pulse width
≤
50 ns
2.4
—
—
V
Capacitance
(Ta = 25
°
C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input capacitance
*1
Cin
—
—
6
pF
Vin = 0 V
Output capacitance
*1
Note:
1. This parameter is periodically sampled and not 100% tested.
Cout
—
—
12
pF
Vout = 0 V
AC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
10%)
Test Conditions
Input pulse levels: 0.4 V to 2.4 V
Input rise and fall time:
≤
20 ns
Output load: 1TTL gate + 100 pF
Reference levels for measuring timing: 0.8 V and 2 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58C65FP-25T | 制造商:Renesas Electronics Corporation 功能描述:EEPROM PARALLEL 64KBIT 8KX8 5V 28SOP - Rail/Tube |
| HN58C65FPI-25T | 制造商:Renesas Electronics Corporation 功能描述:EEPROM PARALLEL 64KBIT 8KX8 5V 28SOP - Rail/Tube |
| HN58C65FPI-25TR | 制造商:Renesas Electronics Corporation 功能描述:EEPROM PARALLEL 64KBIT 8KX8 5V 28SOP - Tape and Reel |
| HN58C65P-25 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
| HN58C65SERIES | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 EEPROM |
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