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參數(shù)資料
| 型號： | HN58C65P-25 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
| 中文描述： | 8192字× 8位電可擦除和可編程的CMOS光盤 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 152K |
| 代理商： | HN58C65P-25 |
HN58C65 Series
13
WE
,
CE
Pin Operation
During a write cycle, addresses are latched by the falling edge of
WE
or
CE
and data is latched by the rising
edge of
WE
or
CE
.
Write/Erase Endurance and Data Retention Time
The endurance is 10
5
cycles in case of the page programming and 3
×
10
3
cycles in case of byte programming
(1% cumulative failure rate). The data retention time is more than 10 years when a device is page-
programmed less than 10
4
cycles.
Data Protection
1. Data Protection against Noise on Control Pins (
CE
,
OE
,
WE
) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to progam
mode by mistake. To prevent this phenomenon, this device has a noise cancelation function that cuts
noise if its width is 20 ns or less in program mode. Be careful not to allow noise of a width of more than
20 ns on the control pins.
WE
CE
OE
5 V
0 V
5 V
0 V
20 ns max
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58C65FP-25 | 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
| HN58C66 | 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM) |
| HN58S256AI | 32768-word ×8-bit Electrically Erasable and Programmable CMOS ROM(256k EEPROM (32k字 ×8位)) |
| HN58S256A | 256 k EEPROM (32-kword x 8-bit) |
| HN58S256AT-20 | 256 k EEPROM (32-kword x 8-bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58C65SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58C66FP-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58C66FP25T | 制造商:HIT 功能描述:HN58C66FP-25T |
| HN58C66FP-25T | 制造商:HIT 功能描述:HN58C66FP-25T |
| HN58C66P25 | 制造商:HITCHI 功能描述: |
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