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參數(shù)資料
| 型號(hào)： | HQ1A4A |
| 廠商： | NEC Corp. |
| 英文描述： | COMPOUND TRANSISTOR |
| 中文描述： | 復(fù)合晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 111K |
| 代理商： | HQ1A4A |
2002
Document No. D16183EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
HQ1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Up to 2A high current drives such as ICs, motors, and solenoids
available
On-chip bias resistor
Low power consumption during drive
HQ1 SERIES LISTS
Products
Marking
R
1
(K
)
R
2
(K
)
HQ1L2N
DP
0.47
1.0
HQ1A3M
DQ
1.0
1.0
HQ1F3M
DR
2.2
2.2
HQ1F3P
DS
2.2
10
HQ1L2Q
DT
0.47
4.7
HQ1F2Q
DU
0.22
2.2
HQ1A4A
DX
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
20
20
10
2.0
3.0
0.04
V
Collector to emitter voltage
V
CEO
V
Emitter to base voltage
V
EBO
V
Collector current (DC)
I
C(DC)
A
Collector current (Pulse)
I
C(pulse)
*
A
Base current (DC)
I
B(DC)
A
Total power dissipation
P
T
**
2.0
W
°
C
°
C
Junction temperature
T
j
150
Storage temperature
T
stg
55 to +150
* PW
≤
10 ms, duty cycle
≤
50 %
**When 0.7 mm
×
16 cm
2
ceramic board is used
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HQ1A3M | COMPOUND TRANSISTOR |
| HQ1L2N | COMPOUND TRANSISTOR |
| HQ1L2Q | COMPOUND TRANSISTOR |
| HQ1F2Q | COMPOUND TRANSISTOR |
| HQ1F3M | COMPOUND TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HQ1F2Q | 制造商:NEC 制造商全稱:NEC 功能描述:COMPOUND TRANSISTOR |
| HQ1F3M | 制造商:NEC 制造商全稱:NEC 功能描述:COMPOUND TRANSISTOR |
| HQ1F3P | 制造商:NEC 制造商全稱:NEC 功能描述:COMPOUND TRANSISTOR |
| HQ1F3P-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| HQ1L2N | 制造商:NEC 制造商全稱:NEC 功能描述:COMPOUND TRANSISTOR |
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