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參數(shù)資料
| 型號(hào)： | HR1A4A |
| 廠商： | NEC Corp. |
| 英文描述： | On-chip resistor PNP silicon epitaxial transistor For mid-speed switching |
| 中文描述： | 片上電阻進(jìn)步黨硅外延晶體管中速開關(guān) |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 120K |
| 代理商： | HR1A4A |
HR1 SERIES
°
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
150
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.1 A
0.2
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
V
Input resistance
R
1
7
10
13
k
k
E-to-B resistance
R
2
7
10
13
≤
μ
≤
°
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
150
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.5 A
0.55
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.29
4.7
6.11
k
≤
μ
≤
°
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
100
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.5 A
V
CE
=
5.0 V, I
C
=
100
μ
A
0.55
0.3
V
Low level input voltage
V
IL
**
V
Input resistance
R
1
154
220
286
k
E-to-B resistance
R
2
1.54
2.2
2.86
k
≤
μ
≤
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