參數(shù)資料
型號: HRF22
廠商: Hitachi,Ltd.
英文描述: Silicon Schottky Barrier Diode for Rectifying
中文描述: 硅肖特基二極管整頓
文件頁數(shù): 3/6頁
文件大?。?/td> 30K
代理商: HRF22
HRF22
3
Main Characteristic
0
0.1
0.2
0.3
0.4
0.5
1.0
10
–1
10
–2
10
–3
10
–4
10
–5
10
–6
10
–7
0
40
50
20
30
10
10
–3
10
–4
10
–5
10
–6
10
–7
Fig.3 Capacitance
Vs. Reverse voltage
1.0
10
2
10
10
10
10
2
3
Fig.1 Forward current Vs. Forward voltage
Forward voltage V (V)
F
F
Pulse test
Reverse voltage V (V)
C
f=1MHz
Pulse test
Fig.2 Reverse current Vs. Reverse voltage
Reverse voltage V (V)
R
R
Pulse test
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HRF302A 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for Rectifying
HRF32 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for Rectifying
HRF3205 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HRF3205_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HRF3205_Q 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube