參數(shù)資料
型號(hào): HRF22
廠商: Hitachi,Ltd.
英文描述: Silicon Schottky Barrier Diode for Rectifying
中文描述: 硅肖特基二極管整頓
文件頁數(shù): 4/6頁
文件大小: 30K
代理商: HRF22
HRF22
4
Main Characteristic
1.6
75
100
25
50
0
125
1.0
0.8
0.6
0.4
0.2
0
1.0
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.4
0
0
0.25
0.20
0.15
0.10
0.05
40
30
20
10
0
0
DC
Sin
D=1/2
D=1/3
D=1/6
t
T
0A
D=
\
T
t
DC
D=1/2
D=5/6
D=2/3
Sin
t
T
0V
D=
\
T
t
1.2
1.4
DC
D=1/2
D=1/3
D=1/6
Sin
VR=VRRM
Tj=125°C
Alumina Board
1.6
75
100
25
50
0
125
1.0
0.8
0.6
0.4
0.2
0
1.2
1.4
DC
D=1/6
VR=VRRM
Print Board
D=1/2
Sin
D=1/3
Ambient temperature
Ta (°C)
AO
Fig.6 Average forward current Vs. Ambient temperature
Ambient temperature
Ta (°C)
AO
Fig.7 Average forward current Vs. Ambient temperature
Forward current I F (A)
Fig.5 Reverse power dissipation Vs. Reverse voltage
F
Fig.4 Forward p ower dissipation Vs. Forward current
Reverse voltage V
R
(V)
R
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HRF302A 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for Rectifying
HRF32 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for Rectifying
HRF3205 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HRF3205_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HRF3205_Q 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube