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參數(shù)資料
| 型號(hào)： | HRW2502B |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 21K |
| 代理商： | HRW2502B |
Features
Low forward voltage drop and suitable for high
effifiency rectifying .
Same power as
TO-220AB.
Small outline compared with
TO-220AB.
Ordering Information
Type No.
Laser Mark
Package Code
HRW2502A L
W2502A
LDPAK L
Pin Arrangement
1
2
3
1 Anode
2 Cathode
3 Anode
ADE-208-242B(Z)
Rev. 2
Jan. 1996
HRW2502A L
Silicon Schottky Barrier Diode
for Rectifying
Absolute Maximum Ratings
(Ta = 25°C)
*
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
**
I
o
***
I
FSM
****
T
j
T
stg
20
V*
Average forward current
25
A
Non-Repetitive peak forward surge current
75
A
Junction temperature
125
°C
Storage temperature
-40 to +125
°C
* Per one device
** See Fig.5
*** Square wave, Duty (1/2), Sum of two devices See Fig.4
**** Sine wave 10msec
Electrical Characteristics
(Ta = 25°C)
*
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
—
—
0.44
V
I
F
= 12.5 A
Reverse current
I
R
—
—
1.0
mA
V
R
= 20 V
ESD-capability
—
500
—
—
V
C=200pF
Both forward and reverse
direction 1 pulse
Thermal resistance
R
th(j-c)
—
1.5
—
°C/W
* Per one device
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