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參數(shù)資料
| 型號： | HS-4080ARH |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Full Bridge N-Channel FET Driver(抗輻射高頻整橋N勾道MOSFET驅(qū)動器) |
| 中文描述： | 輻射加固全橋N溝道FET驅(qū)動器（抗輻射高頻整橋?勾道MOSFET的驅(qū)動器） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | HS-4080ARH |
2
HS-4080ARH Preliminary Pin Descriptions
PIN
NUMBER
SYMBOL
DESCRIPTION
1
BHB
B High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of boot-strap
diode and positive side of bootstrap capacitor to this pin. Internal charge pump supplies 50
μ
A out of this pin to maintain
bootstrap supply. Internal circuitry clamps the bootstrap supply to approximately 15V.
2
HEN
High-side Enable input. Logic level input that when low overrides IN+/IN- (Pins 6 and 7) to put AHO and BHO drivers
(Pins 11 and 20) in low output state. When HEN is high AHO and BHO are controlled by IN+/IN- inputs. The pin can
be driven by signal levels of 0V to 18V (no greater than V
DD
). An internal 100
μ
A pull-up to V
DD
will hold HEN high, so
no connection is required if high-side and low-side outputs are to be controlled by IN+/IN -inputs.
3
DIS
DISable input. Logic level input that when taken high sets all four outputs low. DIS high overrides all other inputs. When
DIS is taken low the outputs are controlled by the other inputs. The pin can be driven by signal levels of 0V to 18V (no
greater than V
DD
). An internal 100
μ
A pull-up to V
DD
will hold DIS high if this pin is not driven.
4
V
SS
Chip negative supply, generally will be ground.
5
OUT
OUTput of the input control comparator. This rail to rail output signal can be used for feedback and hysteresis.
6
IN+
Noninverting input of control comparator. This pin can only be driven by signal levels of 0V to 5.5V. If IN+ is greater
than IN- (Pin 7) then ALO and BHO are low level outputs and BLO and AHO are high level outputs. If IN+ is less than
IN- then ALO and BHO are high level outputs and BLO and AHO are low level outputs. DIS (Pin 3) high level will
override IN+/IN- control for all outputs. HEN (Pin 2) low level will override IN+/IN- control of AHO and BHO. When
switching in four quadrant mode, dead time in a half bridge leg is controlled by HDEL and LDEL (Pins 8 and 9).
7
IN-
Inverting input of control comparator. This pin can only be driven by signal levels of 0V to 5.5V. See IN+ (Pin 6)
description.
8
HDEL
High-side turn-on DELay. Connect resistor from this pin to V
SS
to set timing current that defines the turn-on delay of
both high-side drivers. The low-side drivers turn-off with no adjustable delay, so the HDEL resistor guarantees no
shoot-through by delaying the turn-on of the high-side drivers. HDEL reference voltage is approximately 5.1V.
9
LDEL
Low-side turn-on DELay. Connect resistor from this pin to V
SS
to set timing current that defines the turn-on delay of
both low-side drivers. The high-side drivers turn-off with no adjustable delay, so the LDEL resistor guarantees no shoot-
through by delaying the turn-on of the low-side drivers. LDEL reference voltage is approximately 5.1V.
10
AHB
A High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of boot-strap
diode and positive side of bootstrap capacitor to this pin. Internal charge pump supplies 30
μ
A out of this pin to maintain
bootstrap supply. Internal circuitry clamps the bootstrap supply to approximately 15V.
11
AHO
A High-side Output. Connect to gate of A High-side power MOSFET.
12
AHS
A High-side Source connection. Connect to source of A High-side power MOSFET. Connect negative side of bootstrap
capacitor to this pin.
13
ALO
A Low-side Output. Connect to gate of A Low-side power MOSFET.
14
ALS
A Low-side Source connection. Connect to source of A Low-side power MOSFET.
15
V
CC
Positive supply to gate drivers. Must be same potential as V
DD
(Pin 16). Connect to anodes of two bootstrap diodes.
16
V
DD
Positive supply to lower gate drivers. Must be same potential as V
CC
(Pin 15). De-couple this pin to V
SS
(Pin 4).
17
BLS
B Low-side Source connection. Connect to source of B Low-side power MOSFET.
18
BLO
B Low-side Output. Connect to gate of B Low-side power MOSFET.
19
BHS
B High-side Source connection. Connect to source of B High-side power MOSFET. Connect negative side of bootstrap
capacitor to this pin.
20
BHO
B High-side Output. Connect to gate of B High-side power MOSFET.
HS-4080ARH
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| HS9-4080ARH-Q | Radiation Hardened Full Bridge N-Channel FET Driver |
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| HS9-4424BRH-Q | Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers |
| HS9-4424RH | Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers |
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