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參數(shù)資料
| 型號(hào)： | HS9-4080ARH-8 |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | Circular Connector; No. of Contacts:14; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| 中文描述： | FULL BRDG BASED MOSFET DRIVER, CDFP20 |
| 封裝： | CERAMIC, DFP-20 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | HS9-4080ARH-8 |
4
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4760
μ
m x 5660
μ
m (188 mils x 223 mils)
Thickness: 483
μ
m
±
25.4
μ
m (19 mils
±
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: Phosphorus Silicon Glass
Thickness: 8.0k
±
1.0k
Top Metallization:
Type: AlSiCu
Thickness: 16.0k
±
2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
432
Metallization Mask Layout
HS-4080ARH
15
14
13
12
11
10
9
8
7
6
16
17
18
19
20
1
2
3
4
5
HS-4080ARH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HS-4080ARH | Radiation Hardened Full Bridge N-Channel FET Driver(抗輻射高頻整橋N勾道MOSFET驅(qū)動(dòng)器) |
| HS9-4080ARH-Q | Radiation Hardened Full Bridge N-Channel FET Driver |
| HS9-4080ARH | Radiation Hardened Full Bridge N-Channel FET Driver |
| HS9-4424BRH-8 | Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers |
| HS9-4424BRH-Q | Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HS9-4080ARH-Q | 制造商:Intersil Corporation 功能描述:MOSFET DRVR 5.1V QUAD HI/LO SIDE FULL BRDG INV/NON-INV 20CFP - Bulk |
| HS9408-J1 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Single-Ended Data Acquisition System |
| HS9408-J2 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Single-Ended Data Acquisition System |
| HS9408-K1 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Single-Ended Data Acquisition System |
| HS9408-K2 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Single-Ended Data Acquisition System |
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