參數(shù)資料
型號: HS9-4080ARH
廠商: Intersil Corporation
英文描述: Radiation Hardened Full Bridge N-Channel FET Driver
中文描述: 輻射加固全橋N溝道FET驅(qū)動器
文件頁數(shù): 4/4頁
文件大?。?/td> 82K
代理商: HS9-4080ARH
4
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4760
μ
m x 5660
μ
m (188 mils x 223 mils)
Thickness: 483
μ
m
±
25.4
μ
m (19 mils
±
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: Phosphorus Silicon Glass
Thickness: 8.0k
±
1.0k
Top Metallization:
Type: AlSiCu
Thickness: 16.0k
±
2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
432
Metallization Mask Layout
HS-4080ARH
15
14
13
12
11
10
9
8
7
6
16
17
18
19
20
1
2
3
4
5
HS-4080ARH
相關(guān)PDF資料
PDF描述
HS9-4424BRH-8 Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
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HS-4424BRH Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers(抗輻射雙路同相功率MOSFET驅(qū)動器)
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