- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370687 > HSB88WA PDF資料下載
參數(shù)資料
| 型號： | HSB88WA |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 31K |
| 代理商： | HSB88WA |
HSB88AS
Rev.0, Aug. 2000, page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
I
O
*
Tj
10
V
Average rectified current
15
mA
Junction temperature
125
55 to +125
°
C
°
C
Storage temperature
Note:
Per one device.
Tstg
Electrical Characteristics
*
1
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F1
V
F2
I
R1
I
R2
C
0.350
0.500
30
0.420 V
I
F
= 1 mA
I
F
= 10 mA
V
R
= 2 V
V
R
= 10 V
V
R
= 0 V, f = 1 MHz
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA
C = 200 pF, R = 0
, Both forward and
reverse direction 1 pulse.
0.580
Reverse current
0.2
μ
A
10
Capacitance
0.80
pF
Capacitance deviation
C
V
F
0.10
pF
Forward voltage deviation
10
mV
ESD-Capabilityme *
2
V
Notes
:
1. Per one device.
2. Failure criterion ; I
R
>
0.4
μ
A at V
R
= 2V
相關PDF資料 |
PDF描述 |
|---|---|
| HSB88WK | |
| HSB88YP | Silicon Schottky Barrier Diode for High Speed Switching |
| HSB88WS | Silicon Schottky Barrier Diode for Balanced Mixer |
| HSC119 | Silicon Epitaxial Planar Diode for High Speed Switching |
| HSC226 | Silicon Schottky Barrier Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HSB88WA_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Schottky Barrier Diode for High Speed Switching |
| HSB88WK | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING |
| HSB88WK_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Schottky Barrier Diode for High Speed Switching |
| HSB88WS | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for Balanced Mixer |
| HSB88YP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Schottky Barrier Diode for High Speed Switching |
發(fā)布緊急采購，3分鐘左右您將得到回復。