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參數(shù)資料
| 型號： | HSB88WA |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 31K |
| 代理商： | HSB88WA |
HSB88AS
Rev.0, Aug. 2000, page 3 of 5
Main Characteristic
Reverse voltage V R (V)
RR
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
C
Fig.3 Capacitance Vs. Reverse voltage
Reverse voltage V R (V)
Forward voltage V (V)
F
F
0
0.1
0.2
0.3
0.4
0.5
10
-5
10
-6
10
10
-3
-4
10
-2
0.6
Ta=25
°
C
Ta=75
°
C
0.1
1.0
10
1.0
0.1
10
f=1MHz
0
5
10
10
-9
10
-8
-7
10
15
10
10
-6
-5
Ta=25
°
C
Ta=75
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSB88WK | |
| HSB88YP | Silicon Schottky Barrier Diode for High Speed Switching |
| HSB88WS | Silicon Schottky Barrier Diode for Balanced Mixer |
| HSC119 | Silicon Epitaxial Planar Diode for High Speed Switching |
| HSC226 | Silicon Schottky Barrier Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSB88WA_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Schottky Barrier Diode for High Speed Switching |
| HSB88WK | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING |
| HSB88WK_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Schottky Barrier Diode for High Speed Switching |
| HSB88WS | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for Balanced Mixer |
| HSB88YP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Schottky Barrier Diode for High Speed Switching |
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