參數(shù)資料
型號: HSCH-5300 Series
英文描述: Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz)(1-26 GHz粱式引線肖特基二極管(用于混頻器和檢測器))
中文描述: 梁式引線肖特基二極管的混頻器和檢測器(1-26千兆赫)(1-26千兆赫粱式引線肖特基二極管(用于混頻器和檢測器))
文件頁數(shù): 1/6頁
文件大小: 74K
代理商: HSCH-5300 SERIES
Beam Lead Schottky Diodes for
Mixers and Detectors
( 1– 26 GHz)
Technical Data
HSCH-5300 Series
Features
Platinum Tri-Metal System
High Temperature Stability
Silicon Nitride Passivation
Stable, Reliable Performance
Low Noise Figure
Guaranteed 7.5 dB at 26 GHz
High Uniformity
Tightly Controlled Process
Insures Uniform RF
Characteristics
Rugged Construction
4 Grams Minimum Lead Pull
Low Capacitance
0.10 pF Max. at 0 V
Polyimide Scratch Protection
Description
These beam lead diodes are
constructed using a metal-
semiconductor Schottky barrier
junction. Advanced epitaxial
techniques and precise process
control insure uniformity and
repeatability of this planar
passivated microwave semicon-
ductor. A nitride passivation layer
provides immunity from
contaminants which could
otherwise lead to I
R
drift.
The Agilent beam lead process
allows for large beam anchor pads
for rugged construction (typical
6gram pull strength) without
degrading capacitance.
Outline 07
Maximum Ratings
Pulse Power Incident at T
A
= 25
°
C ..........................................................1 W
Pulse Width = 1
μ
s, Du = 0.001
CW Power Dissipation at T
A
= 25
°
C ................................................ 150 mW
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
T
OPR
– Operating Temperature Range ...............................-65
°
C to +175
°
C
T
STG
– Storage Temperature Range ....................................-65
°
C to +200
°
C
Minimum Lead Strength ........................................4 grams pull on any lead
Diode Mounting Temperature ...............................+350
°
C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
130 (5)
100 (4)
CATHODE
SILICON
GLASS
GOLD LEADS
135 (5)
90 (3)
310 (12)
250 (10)
225 (9)
200 (8)
225 (9)
170 (7)
710 (28)
670 (26)
DIMENSIONS IN
μ
m (1/1000 inch)
135 (5)
90 (3)
60 (2)
40 (1)
12 (.5)
8 (.3)
30 MIN (1)
相關(guān)PDF資料
PDF描述
HSCH-5500 Series Beam Lead Schottky Diode Pairs for Mixers and Detectors(粱式引線肖特基二極管偶(用于混頻器和檢測器))
HSCH-9201 GaAs Beam Lead Schottky Barrier Diodes(砷化鎵粱式引線肖特基勢壘二極管)
HSCH-9101 GaAs Beam Lead Schottky Barrier Diodes(砷化鎵粱式引線肖特基勢壘二極管)
HSCH-9251 GaAs Beam Lead Schottky Barrier Diodes(砷化鎵粱式引線肖特基勢壘二極管)
HSCH-9301 GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes(砷化鎵粱式引線肖特基勢壘環(huán)二極管和橋二極管)
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