參數(shù)資料
型號: HSM276SR
廠商: Hitachi,Ltd.
英文描述: Silicon Schottky Barrier Diode for Balanced Mixer(用于平衡混頻器的肖特基勢壘二極管)
中文描述: 硅肖特基二極管平衡混頻器(用于平衡混頻器的肖特基勢壘二極管)
文件頁數(shù): 2/4頁
文件大?。?/td> 22K
代理商: HSM276SR
HSM276SR
2
Electrical Characteristics
(Ta = 25°C)
*
1
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
V
R
I
R
I
F
C
3.0
V
I
R
= 1mA
V
R
= 0.5V
V
F
= 0.5V
V
R
= 0.5V, f = 1MHz
V
R
= 0.5V, f = 1MHz
*
reverse direction 1 pulse
Reverse current
50
μA
Forward current
35
mA
Capacitance
0.90
pF
Capacitance deviation
C
0.10
pF
ESD Capability
30
V
2
C = 200pF, Both forward and
Notes: 1. Per one device
2. Failure Criterrion; I
R
3 100μA at V
R
= 0.5V
Forward voltage V (V)
F
F
10
10
0
0.4
1.0
0.6
10
0.2
10
10
0.8
–2
–1
–3
–4
–5
Fig.1 Forward current Vs. Forward voltage
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