參數資料
型號: HSMS-280A
英文描述: Surface Mount RF Schottky Diodes in SOT-323(表貼型射頻肖特基二極管(SOT-323封裝))
中文描述: 表面貼裝射頻肖特基二極管的SOT - 323(表貼型射頻肖特基二極管(采用SOT - 323封裝))
文件頁數: 3/6頁
文件大小: 58K
代理商: HSMS-280A
3
Typical Performance, T
C
= 25
°
C (unless otherwise noted), Single Diode,
continued
Figure 4. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-280A Series.
0
10
20
30
50
40
I
R
V
R
– REVERSE VOLTAGE (V)
1
1000
100
10
100,000
10,000
T
A
= +125
°
C
T
A
= +75
°
C
T
A
= +25
°
C
Figure 5. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-281A Series.
0
5
15
I
R
V
R
– REVERSE VOLTAGE (V)
10
1
1000
100
10
100,000
10,000
T
A
= +125
°
C
T
A
= +75
°
C
T
A
= +25
°
C
Figure 6. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-282A Series.
0
5
15
I
R
V
R
– REVERSE VOLTAGE (V)
10
1
1000
100
10
100,000
10,000
T
A
= +125
°
C
T
A
= +75
°
C
T
A
= +25
°
C
Figure 7. Dynamic Resistance vs.
Forward Current.
0.1
1
100
R
D
)
I
F
– FORWARD CURRENT (mA)
10
1
10
1000
100
HSMS-2800 SERIES
HSMS-2810 SERIES
HSMS-2820 SERIES
Figure 8. Total Capacitance vs.
Reverse Voltage—HSMS-280A Series.
0
10
20
30
50
40
C
T
V
R
– REVERSE VOLTAGE (V)
0
1.5
1
0.5
2
Figure 9. Total Capacitance vs.
Reverse Voltage—HSMS-281A Series.
0
2
6
4
10
12
8
16
14
C
T
V
R
– REVERSE VOLTAGE (V)
0
0.75
0.50
0.25
1.25
1
Figure 10. Total Capacitance vs.
Reverse Voltage—HSMS-282A Series.
0
2
8
6
C
T
V
R
– REVERSE VOLTAGE (V)
4
0
0.6
0.4
0.2
1
0.8
相關PDF資料
PDF描述
HSMS-282B Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管)
HSMS-282C Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管)
HSMS-282E Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管)
HSMS-282F Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管)
HSMS-282K Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管)
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參數描述
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HSMS-280B-TR1G 功能描述:肖特基二極管與整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel