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參數(shù)資料
| 型號(hào)： | HSMS-286K |
| 英文描述： | Surface Mount RF Schottky Detector Diodes in SOT-363(表貼型射頻肖特基檢測(cè)二極管（SOT-363封裝）) |
| 中文描述： | 表面貼裝RF肖特基二極管檢測(cè)器采用SOT - 363（表貼型射頻肖特基檢測(cè)二極管（采用SOT - 363封裝）） |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | HSMS-286K |
4
Typical Parameters, Single Diode
1
10
100
1
10
F
(
μ
A
F
(
V
POWER IN (dBm)
0.05
0.15
0.20
0.10
0.25
FORWARD VOLTAGE (V)
Figure 3. Forward Voltage Match,
HSMS-286
a
Series.
.01
.1
1
10
100
0.1 0.2 0.3 0.4
0.7
0.6
0.8 0.9
0.5
1.0
F
FORWARD VOLTAGE (V)
Figure 2. Forward Current vs. Forward
Voltage at Temperature, HSMS-286
a
Series.
Figure 1. +25
°
C Forward Current vs.
Forward Voltage, HSMS-285
a
Series.
1
–40
10
100
1000
10,000
–30
–10
0
–20
10
Figure 6. Dynamic Transfer
Characteristic as a Function of DC Bias,
HSMS-286
a
.
Figure 4. +25
°
C Output Voltage vs.
Input Power, HSMS-285
a
Series at Zero
Bias, HSMS-286
a
Series at 3
μ
A Bias.
Figure 5. +25
°
C Expanded Output
Voltage vs. Input Power. See Figure 4.
5
35
30
40
10
15
20
25
.1
1
10
100
O
BIAS CURRENT (
μ
A)
Figure 7. Voltage Sensitivity as a
Function of DC Bias Current,
HSMS-286
a
.
Figure 8. Output Voltage vs.
Temperature, HSMS-285
a
Series.
T
A
= +85
°
C
T
A
= +25
°
C
T
A
= –55
°
C
I
F
(left scale)
V
F
(right scale)
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
R
L
= 100 K
20
μ
A
5
μ
A
10
μ
A
Input Power =
–30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
R
L
= 100 K
I
F
0
0.01
V
F
– FORWARD VOLTAGE (V)
0.8 1.0
100
1
0.1
0.2
1.8
10
1.4
0.4 0.6
1.2
1.6
V
-50
0.3
POWER IN (dBm)
-30
-20
10000
10
1
-40
0
100
-10
1000
R
L
= 100 K
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
915 MHz
2.45 GHz
V
-50
0.3
POWER IN (dBm)
-30
10
1
-40
30
R
L
= 100 K
2.45 GHz
915 MHz
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
O
0
0.9
TEMPERATURE (
°
C)
40 50
3.1
2.1
1.9
1.5
1.3
10
100
2.5
2.3
80
20 30
70
90
60
1.1
1.7
2.7
2.9
MEASUREMENTS MADE USING A
FR4 MICROSTRIP CIRCUIT.
FREQUENCY = 2.45 GHz
P
IN
= -40 dBm
R
L
= 100 K
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSMS-286L | Surface Mount RF Schottky Detector Diodes in SOT-363(表貼型射頻肖特基檢測(cè)二極管（SOT-363封裝）) |
| HSMS-286P | Surface Mount RF Schottky Detector Diodes in SOT-363(表貼型射頻肖特基檢測(cè)二極管（SOT-363封裝）) |
| HSMS-286R | Surface Mount RF Schottky Detector Diodes in SOT-363(表貼型射頻肖特基檢測(cè)二極管（SOT-363封裝）) |
| HSMS-8205 | Surface Mount Microwave Schottky Mixer Diodes(表貼型微波肖特基混頻二極管（成對(duì)分離）) |
| HSMS-8207 | Surface Mount Microwave Schottky Mixer Diodes(表貼型微波肖特基混頻二極管（四路振鈴）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSMS-286K-BLKG | 功能描述:射頻檢測(cè)器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
| HSMS-286K-BLKG | 制造商:Avago Technologies 功能描述:Diode |
| HSMS-286K-G | 制造商:Avago Technologies 功能描述:HSMS-286K dual microwave detector |
| HSMS-286K-TR1 | 功能描述:DIODE SCHOTTKY DETECT 4V SOT-363 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 二極管 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 二極管類型:PIN - 單 電壓 - 峰值反向(最大):50V 電流 - 最大:50mA 電容@ Vr, F:0.4pF @ 50V，1MHz 電阻@ Vr, F:4.5 歐姆 @ 10mA，100MHz 功率耗散（最大）:100mW 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:3-MCP 包裝:帶卷 (TR) |
| HSMS-286K-TR1G | 功能描述:射頻檢測(cè)器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
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