8
Note that the ground strip which
runs from the two via holes at the
top to the one at the bottom not
only provides ground potential for
leads 2 and 5, but it isolates the
two input/output lines.
Tests were run on the HSMS-282K
and the conventional HSMS-2825
pair, which compare with each
other in the same way as the
HSMS-2865 and HSMS-286K, with
the results shown in Figure 18.
-35
-25
-15
-5
15
5
37 dB
47 dB
O
INPUT POWER (dBm)
0.5
1000
100
10
1
5000
Frequency = 900 MHz
HSMS-2825
RV
out
response
HSMS-282K
ref. diode
Figure 18. Comparing HSMS-282K
with HSMS-2825.
The line marked “RF diode, V
out
”
is the transfer curve for the
detector diode—both the
HSMS-2825 and the HSMS-282K
exhibited the same output voltage.
The data were taken over the
50 dB dynamic range shown. To
the right is the output voltage
(transfer) curve for the reference
diode of the HSMS-2825, showing
37 dB of isolation. To the right of
that is the output voltage due to
RF leakage for the reference diode
of the HSMS-282K, demonstrating
10 dB higher isolation than the
conventional part.
Such differential detector circuits
generally use single diode
detectors, either series or shunt
mounted diodes. The voltage
doubler (HP Application Note
956-4) offers the advantage of
twice the output voltage for a
given input power. The two
concepts can be combined into
the differential voltage doubler, as
shown in Figure 19.
matching
network
bias
differential
amplifier
Figure 19. Differential Voltage
Doubler, HSMS-286P.
Here, all four diodes of the
HSMS-286P are matched in their
V
f
characteristics, because they
came from adjacent sites on the
wafer. A similar circuit can be
realized using the HSMS-286R ring
quad.
Other configurations of six lead
Schottky products can be used to
solve circuit design problems
while saving space and cost.
Thermal Considerations
The obvious advantage of the
SOT-363 over the SOT-143 is
combination of smaller size and
two extra leads. However, the
copper leadframe in the SOT-363
has a thermal conductivity four
times higher than the Alloy 42
leadframe of the SOT-143, which
enables it to dissipate more
power.
The maximum junction tempera-
ture for these three families of
Schottky diodes is 150
°
C under all
operating conditions. The follow-
ing equation, equation 1, applies
to the thermal analysis of diodes:
T
j
= (V
f
I
f
+ P
RF
)
θ
jc
+ T
a
E quation ( 1) .
where
T
j
= junction temperature
T
a
= diode case temperature
θ
jc
= thermal resistance
V
f
I
f
= DC power dissipated
P
RF
= RF power dissipated
Note that
θ
jc
, the thermal resis-
tance from diode junction to the
foot of the leads, is the sum of two
component resistances,
θ
jc
=
θ
pkg
+
θ
chip
E quation ( 2) .
Package thermal resistance for
the SOT-363 package is approxi-
mately 100
°
C/W, and the chip
thermal resistance for these three
families of diodes is approxi-
mately 40
°
C/W. The designer will
have to add in the thermal
resistance from diode case to
ambient—a poor choice of circuit
board material or heat sink design
can make this number very high.