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參數(shù)資料
| 型號： | HT666 |
| 英文描述： | NPN75V600mA625mW|Bipolar Transistors |
| 中文描述： | NPN75V600mA625mW |雙極晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 29K |
| 代理商： | HT666 |
HI-SINCERITY
MICROELECTRONICS CORP.
HT666
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6464-B
Issued Date : 1993.09.07
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification
Description
The HT666 is designed for general purpose amplifier and high-
speed,medium-power switching applications.
Features
High Frequency Current Gain
High Speed Switching Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
BVCBO Collector to Base Voltage....................................................................................... 75 V
BVCEO Collector to Emitter Voltage.................................................................................... 40 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current........................................................................................................ 600 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
*hFE6
fT
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
50
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
50
300
1
1.2
2
-
-
-
300
-
-
-
Unit
V
V
V
nA
nA
nA
mV
V
V
V
-
-
-
-
-
-
MHz
Test Conditions
IC=10uA
IC=100mA
IE=10uA
VCB=60V
VCB=60V, VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
IC=20mA VCE=20V, f=100MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
-
-
-
TO-92
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