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參數(shù)資料
| 型號： | HT666 |
| 英文描述： | NPN75V600mA625mW|Bipolar Transistors |
| 中文描述： | NPN75V600mA625mW |雙極晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 29K |
| 代理商： | HT666 |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6464-B
Issued Date : 1993.09.07
Revised Date : 2000.10.01
Page No. : 2/3
HSMC Product Specification
Characteristics Curve
DC Current Gain
1
10
100
1000
1
10
Collector current (mA)
100
1000
h
Gain Bandwidth Product & Collector Current
10
100
1000
10000
1
10
100
Collector Current (mA)
G
Collector-Emitter Saturation Voltage
0.0
0.1
1.0
10.0
1
10
Collector Current (mA)
100
1000
S
Total Power Dissipation & Ambient
Temperature
0
200
400
600
800
0
25
50
75
100
125
150
175
200
Ta-Ambient Temperature
T
Base-Emitter Saturation Voltage
0.1
1
10
1
10
Collector current (mA)
100
1000
V
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