參數(shù)資料
型號： HUF75307T3ST
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
中文描述： 2.6 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 2/8頁
文件大?。?/td> 325K
代理商： HUF75307T3ST
2
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Figure 2) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
55
55
±
20V
2.6
Figure 5
A
Figures 6, 14, 15
1.1
9.09
-55 to 150
W
mW/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
V
DS
= 50V, V
GS
= 0V
V
DS
= 45V, V
GS
= 0V, T
A
= 150
o
C
V
GS
=
±
20V
I
D
= 2.6A, V
GS
= 10V) (Figure 9)
V
DD
= 30V, I
D
2.6A,
R
L
= 11.5
, V
GS
=
10V,
R
GS
= 25
55
-
-
V
Gate to Source Threshold Voltage
2
-
4
V
μ
A
μ
A
nA
ns
Zero Gate Voltage Drain Current
-
-
1
-
-
250
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
-
-
100
Drain to Source On Resistance
-
0.070
0.090
Turn-On Time
-
-
55
Turn-On Delay Time
-
5
-
ns
Rise Time
-
30
-
ns
Turn-Off Delay Time
-
35
-
ns
Fall Time
-
25
-
ns
Turn-Off Time
-
-
90
ns
Total Gate Charge
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V,
I
D
2.6A,
R
L
= 11.5
I
g(REF)
= 1.0mA
(Figure 13)
-
14
17
nC
Gate Charge at 10V
-
8.3
10
nC
Threshold Gate Charge
-
0.6
0.8
nC
Gate to Source Gate Charge
Qgs
-
1.00
-
nC
Gate to Drain “Miller” Charge
Qgd
-
4.00
-
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JA
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
250
-
pF
Output Capacitance
-
115
-
pF
Reverse Transfer Capacitance
-
30
-
pF
Thermal Resistance Junction to Ambient
Pad Area = 0.171 in
2
(see note 2)
Pad Area = 0.068 in
2
Pad Area = 0.026 in
2
-
-
110
o
C/W
o
C/W
o
C/W
-
-
128
-
-
147
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
Q
RR
I
SD
= 2.6A
I
SD
= 2.6A, dI
SD
/dt = 100A/
μ
s
I
SD
= 2.6A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
Reverse Recovery Time
-
-
40
ns
Reverse Recovered Charge
-
-
50
nC
NOTE:
2. 110
o
C/W measured using FR-4 board with 0.171in
2
footprint for 1000s.
HUF75307T3ST
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參數(shù)描述
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HUF75309D3S 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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HUF75309D3ST_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
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