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參數(shù)資料
| 型號(hào)： | HUF75309D3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大小： | 102K |
| 代理商： | HUF75309D3S |
9
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SPICE Thermal Model
REV February 1999
HUF75309
CTHERM1 th 6 8e-4
CTHERM2 6 5 1e-3
CTHERM3 5 4 2e-3
CTHERM4 4 3 2.8e-3
CTHERM5 3 2 5.5e-3
CTHERM6 2 tl 1.6e-2
RTHERM1 th 6 1e-3
RTHERM2 6 5 7e-3
RTHERM3 5 4 9e-2
RTHERM4 4 3 4e-1
RTHERM5 3 2 6e-1
RTHERM6 2 tl 9.5e-1
SABER Thermal Model
SABER thermal model HUF75309
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 8e-4
ctherm.ctherm2 6 5 = 1e-3
ctherm.ctherm3 5 4 = 2e-3
ctherm.ctherm4 4 3 = 2.8e-3
ctherm.ctherm5 3 2 = 5.5e-3
ctherm.ctherm6 2 tl = 1.6e-2
rtherm.rtherm1 th 6 = 1e-3
rtherm.rtherm2 6 5 = 7e-3
rtherm.rtherm3 5 4 = 9e-2
rtherm.rtherm4 4 3 = 4e-1
rtherm.rtherm5 3 2 = 6e-1
rtherm.rtherm6 2 tl = 9.5e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF75309P3, HUF75309D3, HUF75309D3S
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| HUF75329S3S | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75329P3 | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75329G3 | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs(49A, 55V, 0.024Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75309D3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75309D3ST_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75309P3 | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75309P3_Q | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75309T3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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