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參數(shù)資料
| 型號(hào)： | HUF75309T3ST |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
| 中文描述： | 3 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 88K |
| 代理商： | HUF75309T3ST |
23
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HUF75309T3ST
3A, 55V 0.070 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75309.
Features
3A, 55V
Ultra Low On-Resistance, r
DS(ON)
= 0.070
Diode Exhibits Both High Speed and Soft Recovery
Temperature Compensating PSPICE Model
Thermal Impedance SPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
SOT-223
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75309T3ST
SOT-223
5309
NOTE: HUF75309T3ST is available only in tape and reel.
D
G
S
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
Data Sheet
June 1999
File Number
4377.3
相關(guān)PDF資料 |
PDF描述 |
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| HUF75309T3ST | 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
| HUF75329S3S | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75329P3 | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75329G3 | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs(49A, 55V, 0.024Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管) |
| HUF75329D3S | 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75321D3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75321D3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N I-PAK |
| HUF75321D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75321D3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75321D3ST_S2457 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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