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參數(shù)資料
| 型號： | HUF75309P3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 17 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 102K |
| 代理商： | HUF75309P3 |
5
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
-80
0.5
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s, V
GS
= 10V, I
D
= 19A
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
-40
0
40
80
120
160
200
-80
0.6
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
1.0
1.1
1.2
-40
0
40
80
120
160
200
0.9
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
100
200
300
400
500
10
20
30
40
50
60
0
0
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
2
4
6
8
10
3
6
9
12
0
0
V
G
,
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 19A
I
D
= 15A
I
D
= 10A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
HUF75309P3, HUF75309D3, HUF75309D3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75309P3 | 30V N-Channel PowerTrench MOSFET |
| HUF75309D3 | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75309D3S | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75309T3ST | 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
| HUF75309T3ST | 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75309P3_Q | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75309T3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75321D3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75321D3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N I-PAK |
| HUF75321D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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