- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371904 > HUF75333S3S (INTERSIL CORP) 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | HUF75333S3S |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs |
| 中文描述： | 66 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 108K |
| 代理商： | HUF75333S3S |
106
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
100
1000
10
-4
10
-3
10
-2
10
-1
10
0
10
1
50
10
-5
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
100
10
100
1
1
500
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
100
μ
s
10ms
1ms
V
DSS(MAX)
= 55V
LIMITED BY r
DS(ON)
AREA MAY BE
100
0.01
t
AV
, TIME IN AVALANCHE (ms)
0.1
1
10
0.001
500
10
I
A
,
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
30
60
90
120
150
1.5
3.0
4.5
6.0
7.5
0
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 5V
V
GS
= 10V
V
GS
= 20V
V
GS
= 7V
30
60
90
120
150
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
0
0
175
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
,
HUF75333G3, HUF75333P3, HUF75333S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75339G3 | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75339P3 | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場效應(yīng)管) |
| HUF75339S3S | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場效應(yīng)管) |
| HUF75339P3 | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75339G3 | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75333S3ST | 功能描述:MOSFET 55V NCh Power MOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75337G3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75337P3 | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75337P3_Q | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75337S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。