- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371904 > HUF75339P3 (HARRIS SEMICONDUCTOR) 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | HUF75339P3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場效應(yīng)管) |
| 中文描述： | 70 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 108K |
| 代理商： | HUF75339P3 |
121
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HUF75339G3, HUF75339P3, HUF75339S3S
75A, 55V 0.012 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75339.
Features
75A, 55V
Simulation Models
- Temperature Compensated PSPICE
and SABER
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at:
www.Intersil.com/families/models.htm
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75339G3
TO-247
75339G
HUF75339P3
TO-220AB
75339P
HUF75339S3S
TO-263AB
75339S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75339S3ST.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
GATE
SDRAIN
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
June 1999
File Number
4363.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75339S3S | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場效應(yīng)管) |
| HUF75339P3 | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75339G3 | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75339S3S | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75343S3S | 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75339P3_Q | 功能描述:MOSFET 75a 55V 0.012Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75339S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75339S3S | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75339S3S_TR4935 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75339S3ST | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。