參數(shù)資料
型號(hào)： HUF75339G3
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
中文描述： 70 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 4/9頁(yè)
文件大小： 108K
代理商： HUF75339G3
124
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
50
100
1000
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
100
500
10
100
1
1
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
100
μ
s
10ms
1ms
V
DSS(MAX)
= 55V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
0.001
100
0.01
t
AV
, TIME IN AVALANCHE (ms)
0.1
1
10
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
500
0
30
60
90
120
150
0
1
2
3
4
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 5V
V
GS
= 6V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 10V
V
GS
= 7V
V
GS
= 20V
0
30
60
90
120
150
0
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
-55
o
C
175
o
C
I
D
,
25
o
C
V
DD
= 15V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
HUF75339G3, HUF75339P3, HUF75339S3S
相關(guān)PDF資料
PDF描述
HUF75339P3 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管)
HUF75339S3S 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管)
HUF75339P3 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
HUF75339G3 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
HUF75339S3S 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75339G3_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75339P3 功能描述:MOSFET 75a 55V 0.012Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75339P3_Q 功能描述:MOSFET 75a 55V 0.012Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75339S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF75339S3S 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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