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參數(shù)資料
| 型號： | HUF75339P3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場效應(yīng)管) |
| 中文描述： | 70 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 108K |
| 代理商： | HUF75339P3 |
129
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SPICE Thermal Model
REV 11 February 1999
HUF75339
CTHERM1 th 6 5.00e-3
CTHERM2 6 5 1.90e-2
CTHERM3 5 4 7.95e-3
CTHERM4 4 3 9.00e-3
CTHERM5 3 2 2.95e-2
CTHERM6 2 tl 12.55
RTHERM1 th 6 5.04e-3
RTHERM2 6 5 1.25e-2
RTHERM3 5 4 3.54e-2
RTHERM4 4 3 1.98e-1
RTHERM5 3 2 2.99e-1
RTHERM6 2 tl 3.97e-2
SABER Thermal Model
SABER thermal model HUF75339
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 5.00e-3
ctherm.ctherm2 6 5 = 1.90e-2
ctherm.ctherm3 5 4 = 7.95e-3
ctherm.ctherm4 4 3 = 9.00e-3
ctherm.ctherm5 3 2 = 2.95e-2
ctherm.ctherm6 2 tl = 12.55
rtherm.rtherm1 th 6 = 5.04e-3
rtherm.rtherm2 6 5 = 1.25e-2
rtherm.rtherm3 5 4 = 3.54e-2
rtherm.rtherm4 4 3 = 1.98e-1
rtherm.rtherm5 3 2 = 2.99e-1
rtherm.rtherm6 2 tl = 3.97e-2
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF75339G3, HUF75339P3, HUF75339S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75339S3S | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場效應(yīng)管) |
| HUF75339P3 | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75339G3 | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75339S3S | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75343S3S | 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75339P3_Q | 功能描述:MOSFET 75a 55V 0.012Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75339S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75339S3S | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75339S3S_TR4935 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75339S3ST | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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