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參數資料
| 型號： | HUF75531SK8 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET |
| 中文描述： | 6 A, 80 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數： | 6/12頁 |
| 文件大?。?/td> | 183K |
| 代理商： | HUF75531SK8 |
6
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, T
JM
, and the
thermal resistance of the heat dissipating path determines the
maximum allowable device power dissipation, P
DM
, in an
application. Therefore the application’s ambient temperature,
T
A
(
o
C), and thermal resistance R
θ
JA
(
o
C/W) must be reviewed
to ensure that T
JM
is never exceeded. Equation 1
mathematically represents the relationship and serves as the
basis for establishing the rating of the part.
In using surface mount devices such as the SOP-8 package,
the environment in which it is applied will have a significant
influence on the part’s current and maximum power
dissipation ratings. Precise determination of P
DM
is complex
and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. Thenumberofcopperlayersandthethicknessoftheboard.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Intersil provides thermal information to assist the designer’s
preliminary application evaluation. Figure 20 defines the
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. SWITCHING TIME WAVEFORM
Test Circuits and Waveforms
(Continued)
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
Q
gs
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20V
V
DS
V
GS
I
g(REF)
0
0
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
(EQ. 1)
PDM
θ
JA
–
(
------------------------------
)
=
HUF75531SK8
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PDF描述 |
|---|---|
| HUF75631SK8 | 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75631P3 | 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75631P3 | 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75631SK8 | 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75631S3ST | 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUF75531SK8T | 功能描述:MOSFET 6a 80V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75542P3 | 功能描述:MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75542P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 80V 75A TO220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 80V, 75A, TO220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 80V, 75A, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:80V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes |
| HUF75542P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR TYPE:MOSFET ((NW)) |
| HUF75542P3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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