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參數(shù)資料
| 型號： | HUF75631P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs |
| 中文描述： | 33 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 356K |
| 代理商： | HUF75631P3 |
1
File Number
4785
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HUF75631SK8
5.5A, 100V, 0.039 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.039
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE
and SABER
Electrical Models
- Spice and SABER
Thermal Impedance Models
- www.Intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Ordering Information
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
DRAIN (8)
SOURCE (1)
DRAIN (7)
DRAIN (6)
DRAIN (5)
SOURCE (3)
GATE (4)
SOURCE (2)
PART NUMBER
PACKAGE
BRAND
HUF75631SK8
MS-012AA
75631SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75631SK8T.
HUF75631SK8
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
100
V
100
V
±
20
V
5.5
3.5
Figure 4
A
A
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5
20
W
mW/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 10 second.
3. 152
o
C/W measured using FR-4 board with 0.054 in
2
(34.8 mm
2
) copper pad at 1000 seconds
4. 189
o
C/W measured using FR-4 board with 0.0115 in
2
(7.42 mm
2
) copper pad at 1000 seconds
-55 to 150
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
October 1999
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75631S3S | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631S3ST | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631SK8 | 功能描述:MOSFET USE 512-FDS3682 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631SK8T | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631SK8T_NB82083 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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