參數(shù)資料
型號： HUF75531SK8T
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
中文描述： 6 A, 80 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù)： 2/12頁
文件大小： 183K
代理商： HUF75531SK8T
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
DS
= 75V, V
GS
= 0V
V
DS
= 70V, V
GS
= 0V, T
A
= 150
o
C
V
GS
=
±
20V
80
-
-
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
μ
A
nA
-
-
250
Gate to Source Leakage Current
I
GSS
-
-
±
100
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
I
D
= 6A, V
GS
= 10V (Figure 9)
2
-
4
V
Drain to Source On Resistance
-
0.025
0.030
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
θ
JA
Pad Area = 0.76 in
2
(490.3 mm
2
) (Note 2)
Pad Area = 0.054 in
2
(34.8 mm
2
) (Note 3)
Pad Area = 0.0115 in
2
(7.42 mm
2
)(Note 4)
-
-
50
o
C/W
o
C/W
o
C/W
-
-
152
189
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 40V, I
D
= 6A
V
GS
=
10V,
R
GS
= 6.8
(Figures 18, 19)
-
-
55
ns
Turn-On Delay Time
-
10.5
-
ns
Rise Time
-
25
-
ns
Turn-Off Delay Time
-
49
-
ns
Fall Time
-
29
-
ns
Turn-Off Time
-
-
115
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 40V,
I
D
= 6A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
68
82
nC
Gate Charge at 10V
-
37
45
nC
Threshold Gate Charge
-
2.4
2.9
nC
Gate to Source Gate Charge
-
4.8
-
nC
Gate to Drain "Miller" Charge
-
14
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
1210
-
pF
Output Capacitance
-
385
-
pF
Reverse Transfer Capacitance
-
115
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 6A
I
SD
= 4A
I
SD
= 6A, dI
SD
/dt = 100A/
μ
s
I
SD
= 6A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.00
V
Reverse Recovery Time
t
rr
-
-
105
ns
Reverse Recovered Charge
Q
RR
-
-
325
nC
HUF75531SK8
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相關代理商/技術參數(shù)
參數(shù)描述
HUF75542P3 功能描述:MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75542P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 80V 75A TO220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 80V, 75A, TO220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 80V, 75A, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:80V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes
HUF75542P3 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR TYPE:MOSFET ((NW))
HUF75542P3_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75542S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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