參數(shù)資料
型號： HUF75639G3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： DIODE ZENER DUAL ISOLATED 200mW 5.1Vz 20mA-Izt 0.05 5uA-Ir 2 SOT-363 3K/REEL
中文描述： 56 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 3/9頁
文件大?。?/td> 370K
代理商： HUF75639G3
3
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
2000
-
pF
Output Capacitance
C
OSS
-
500
-
pF
Reverse Transfer Capacitance
C
RSS
-
65
-
pF
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 56A
I
SD
= 56A, dI
SD
/dt = 100A/
μ
s
I
SD
= 56A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
Reverse Recovery Time
t
rr
-
-
110
ns
Reverse Recovered Charge
Q
RR
-
-
320
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
0
10
20
30
40
50
60
25
50
75
100
125
150
175
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
SINGLE PULSE
Z
θ
J
,
T
t, RECTANGULAR PULSE DURATION (s)
2
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
HUF75639G3, HUF75639P3, HUF75639S3S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75639G3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
HUF75639G3_Q 功能描述:MOSFET 56a 100V N-Ch UltraFET .25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75639P3 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75639P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETN CH100V56ATO-220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET,N CH,100V,56A,TO-220AB
HUF75639P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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