參數(shù)資料
型號(hào)： HUF75831SK8T
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET
中文描述： 3 A, 150 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： MS-012AA, 8 PIN
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 182K
代理商： HUF75831SK8T
1
TM
File Number
4796.1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
SABER is a Copyright of Analogy Inc.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation.
|
Copyright
Intersil Corporation 2000
HUF75831SK8
3A, 150V, 0.095 Ohm, N-Channel, UltraFET
Power MOSFET
Packaging
JEDEC MS-012AA
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.095
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER
Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
BRANDING DASH
1
2
3
4
5
DRAIN (8)
SOURCE (1)
DRAIN (7)
DRAIN (6)
DRAIN (5)
SOURCE (3)
GATE (4)
SOURCE (2)
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75831SK8
MS-012AA
75831SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75831SK8T.
HUF75831SK8
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
A
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
150
V
150
±
20
V
V
3
2
Figure 4
A
A
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5
20
W
mW/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 10 second.
3. 152
o
C/W measured using FR-4 board with 0.054 in
2
(34.8 mm
2
) copper pad at 1000 seconds
4. 189
o
C/W measured using FR-4 board with 0.0115 in
2
(7.42 mm
2
) copper pad at 1000 seconds
-55 to 150
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
March 2000
相關(guān)PDF資料
PDF描述
HUF75831SK8 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75842P3 功能描述:MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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HUF75842S3S 功能描述:MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75842S3ST 功能描述:MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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