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參數(shù)資料
| 型號： | HUF75639P3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 56 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 370K |
| 代理商： | HUF75639P3 |
5
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
O
V
GS
= 10V, I
D
= 56A
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
T
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
0.9
1.2
B
N
T
J
, JUNCTION TEMPERATURE (
o
C)
1.0
1.1
-80
-40
0
40
80
120
160
200
I
D
= 250
μ
A
0
500
1000
1500
2000
2500
3000
0
10
20
30
40
50
60
C
ISS
C
RSS
C
OSS
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
0
2
4
6
8
10
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
V
G
,
I
D
= 56A
I
D
= 37A
I
D
= 18A
WAVEFORMS IN
V
DD
= 50V
HUF75639G3, HUF75639P3, HUF75639S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75639S3 | 30V N-Channel PowerTrench MOSFET |
| HUF75639P3 | 30V N-Channel PowerTrench MOSFET |
| HUF75639G3 | DIODE ZENER DUAL ISOLATED 200mW 5.1Vz 20mA-Izt 0.05 5uA-Ir 2 SOT-363 3K/REEL |
| HUF75639S3S | 30V N-Channel PowerTrench MOSFET |
| HUF75831SK8 | 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75639P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETN CH100V56ATO-220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET,N CH,100V,56A,TO-220AB |
| HUF75639P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| HUF75639P3_F102 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75639P3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75639P3_Q | 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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