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參數(shù)資料
| 型號： | HUF75639S3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 56 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 370K |
| 代理商： | HUF75639S3 |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HUF75639G3, HUF75639P3, HUF75639S3S
56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75639.
Features
56A, 100V
Simulation Models
- Temperature Compensated PSPICE
TM
and SABER
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.Intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75639G3
TO-247
75639G
HUF75639P3
TO-220AB
75639P
HUF75639S3S
TO-263AB
75639S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
GATE
SDRAIN
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
October 1999
File Number
4477.7
相關PDF資料 |
PDF描述 |
|---|---|
| HUF75639P3 | 30V N-Channel PowerTrench MOSFET |
| HUF75639G3 | DIODE ZENER DUAL ISOLATED 200mW 5.1Vz 20mA-Izt 0.05 5uA-Ir 2 SOT-363 3K/REEL |
| HUF75639S3S | 30V N-Channel PowerTrench MOSFET |
| HUF75831SK8 | 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75831SK8T | 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75639S3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75639S3R4851 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET |
| HUF75639S3S | 功能描述:MOSFET 56a 100V N-Ch UltraFET .25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75639S3S_Q | 功能描述:MOSFET 56a 100V N-Ch UltraFET .25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75639S3ST | 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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