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參數(shù)資料
| 型號： | HUF76105DK8T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SO |
| 中文描述： | 5 A, 30 V, 0.072 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 123K |
| 代理商： | HUF76105DK8T |
8-8
Intersil provides thermal information to assist the designer’s
preliminary application evaluation. Figure 23 defines the R
θ
JA
for the device as a function of the top copper (component side)
area. This is for a horizontally positioned FR-4 board with 1oz
copper after 1000 seconds of steady state power with no air
flow. This graph provides the necessary information for calcula-
tion of the steady state junction temperature or power dissipa-
tion. Pulse applications can be evaluated using the Intersil
device Spice thermal model or manually utilizing the normal-
ized maximum transient thermal impedance curve.
Displayed on the curve are R
θ
JA
values listed in the Electrical
Specifications table. The points were chosen to depict the
compromise between the copper board area, the thermal
resistance and ultimately the power dissipation, P
DM
.
Thermal resistances corresponding to other copper areas can
be obtained from Figure 23 or by calculation using Equation 2.
R
θ
JA
is defined as the natural log of the area times a coefficient
added to a constant. The area, in square inches is the top
copper area including the gate and source pads.
ln
×
–
=
The transient thermal impedance (Z
θ
JA
) is also effected by var-
ied top copper board area. Figure 24 shows the effect of copper
pad area on single pulse transient thermal impedance. Each
trace represents a copper pad area in square inches corre-
sponding to the descending list in the graph. SPICE and SABER
thermal models are provided for each of the listed pad areas.
Copper pad area has no perceivable effect on transient thermal
impedance for pulse widths less than 100ms. For pulse widths
less than 100ms the transient thermal impedance is deter-
mined by the die and package. Therefore, CTHERM1 through
CTHERM5 and RTHERM1 through RTHERM5 remain con-
stant for each of the thermal models. A listing of the model com-
ponent values is available in Table 1.
(EQ. 2)
R
θ
JA
103.2
24.3
Area
(
)
0
0.001
50
100
150
200
250
300
0.01
0.1
1
R
θ
J
(
o
C
AREA, TOP COPPER AREA (in
2
)
175
o
C/W - 0.054in
2
212
o
C/W - 0.0115in
2
FIGURE 23. THERMAL RESISTANCE vs MOUNTING PAD AREA
R
θ
JA
= 103.2 - 24.3 *
ln
(AREA)
0
40
80
120
160
10
-1
10
0
10
1
10
2
10
3
FIGURE 24. THERMAL IMPEDANCE vs MOUNTING PAD AREA
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
I
o
C
COPPER BOARD AREA - DESCENDING ORDER
0.020 in
0.140 in
2
0.257 in
2
0.380 in
2
0.493 in
2
HUF76105SK8
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| HUF76121SK8 | 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76105SK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76105SK8T | 功能描述:MOSFET 5a 30V 0.050 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76107D3 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76107D3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76107D3ST | 功能描述:MOSFET USE 512-FDD6630A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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