參數(shù)資料
型號(hào)： HUF76121D3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
中文描述： 20 A, 30 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 11/11頁
文件大?。?/td> 124K
代理商： HUF76121D3
11
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
SPICE Thermal Model
REV November 1998
HUF76121SK8
Copper Area = 0.04 in
2
CTHERM1 th 8 2.0e-3
CTHERM2 8 7 5.0e-3
CTHERM3 7 6 1.0e-2
CTHERM4 6 5 4.0e-2
CTHERM5 5 4 9.0e-2
CTHERM6 4 3 1.2e-1
CTHERM7 3 2 0.5
CTHERM8 2 tl 1.3
RTHERM1 th 8 0.1
RTHERM2 8 7 0.5
RTHERM3 7 6 1.0
RTHERM4 6 5 5.0
RTHERM5 5 4 8.0
RTHERM6 4 3 26
RTHERM7 3 2 39
RTHERM8 2 tl 55
SABER Thermal Model
Copper Area = 0.04 in
2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 = 2.0e-3
ctherm.ctherm2 8 7 = 5.0e-3
ctherm.ctherm3 7 6 = 1.0e-2
ctherm.ctherm4 6 5 = 4.0e-2
ctherm.ctherm5 5 4 = 9.0e-2
ctherm.ctherm6 4 3 = 1.2e-1
ctherm.ctherm7 3 2 = 0.5
ctherm.ctherm8 2 tl = 1.3
rtherm.rtherm1 th 8 = 0.1
rtherm.rtherm2 8 7 = 0.5
rtherm.rtherm3 7 6 = 1.0
rtherm.rtherm4 6 5 = 5.0
rtherm.rtherm5 5 4 = 8.0
rtherm.rtherm6 4 3 = 26
rtherm.rtherm7 3 2 = 39
rtherm.rtherm8 2 tl = 55
}
TABLE 1. Thermal Models
RTHERM6
RTHERM8
RTHERM7
RTHERM5
RTHERM4
RTHERM3
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
7
JUNCTION
CASE
8
th
RTHERM2
RTHERM1
CTHERM7
CTHERM8
COMPONANT
0.04 in
2
0.28 in
2
0.52 in
2
0.76 in
2
1.0 in
2
CTHERM6
1.2e-1
1.5e-1
2.0e-1
2.0e-1
2.0e-1
CTHERM7
0.5
1.0
1.0
1.0
1.0
CTHERM8
1.3
2.8
3.0
3.0
3.0
RTHERM6
26
20
15
13
12
RTHERM7
39
24
21
19
18
RTHERM8
55
38.7
31.3
29.7
25
HUF76121SK8
相關(guān)PDF資料
PDF描述
HUF76121P3 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121D3S 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121S3S 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121D3 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121D3S 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76121D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3ST 功能描述:MOSFET USE 512-FDD6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121P3 功能描述:MOSFET 47a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76121S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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