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參數(shù)資料
| 型號： | HUF76121D3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 20 A, 30 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 124K |
| 代理商： | HUF76121D3 |
2
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 5V) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
30
30
±
16
8
2.5
2.3
Figure 4
A
A
A
Figures 6, 17, 18
2.5
20
-55 to 150
W
mW/
o
C
o
C
300
260
o
C
o
C
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
footprint at 10 seconds.
3. 189
o
C/W measured using FR-4 board with 0.0115 in
2
footprint at 1000 seconds.
Electrical Specifications
T
A
= 25
o
C
,
Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 8A, V
GS
= 10V (Figures 9, 10)
-
0.018
0.023
I
D
= 2.5A, V
GS
= 5V (Figure 9)
-
0.021
0.028
I
D
= 2.3A, V
GS
= 4.5V (Figure 9)
-
0.022
0.031
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Ambient
R
θ
JA
Pad Area = 0.76 in
2
(Note 2)
-
-
50
o
C/W
Pad Area = 0.054 in
2
(Figure 23)
-
-
152
o
C/W
Pad Area = 0.0115 in
2
(Figure 23)
-
-
189
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
2.3A, R
L
= 6.5
,
V
GS
=
4.5V, R
GS
= 10
(Figures 15, 21, 22)
-
-
85
ns
Turn-On Delay Time
t
d(ON)
-
17
-
ns
Rise Time
t
r
-
40
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
30
-
ns
Turn-Off Time
t
OFF
-
-
105
ns
HUF76121SK8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76121D3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76121D3ST | 功能描述:MOSFET USE 512-FDD6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76121P3 | 功能描述:MOSFET 47a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76121S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF76121S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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