參數(shù)資料
型號： HUF76121D3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
中文描述： 20 A, 30 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝： TO-251AA, 3 PIN
文件頁數(shù)： 3/11頁
文件大小： 124K
代理商： HUF76121D3
3
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
8A, R
L
=1.9
, V
GS
=
10V,
R
GS
= 12
(Figures 16, 21, 22)
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
10
-
ns
Rise Time
t
r
-
29
-
ns
Turn-Off Delay Time
t
d(OFF)
-
64
-
ns
Fall Time
t
f
-
40
-
ns
Turn-Off Time
t
OFF
-
-
155
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V, I
D
2.5A,
R
L
= 6.0
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
24
29
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
14
17
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
0.8
1.0
nC
Gate to Source Gate Charge
Q
gs
-
1.9
-
nC
Reverse Transfer Capacitance
Q
gd
-
7
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
850
-
pF
Output Capacitance
C
OSS
-
465
-
pF
Reverse Transfer Capacitance
C
RSS
-
100
-
pF
Electrical Specifications
T
A
= 25
o
C
,
Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 8A
-
-
1.25
V
I
SD
= 2.5A
1.10
V
Reverse Recovery Time
t
rr
I
SD
= 2.5A, dI
SD
/dt = 100A/
μ
s
-
-
65
ns
Reverse Recovered Charge
Q
RR
I
SD
= 2.5A, dI
SD
/dt = 100A/
μ
s
-
-
100
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
2
4
6
8
10
25
50
75
100
125
150
0
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= 4.5V, R
θ
JA
= 189
o
C/W
V
GS
= 10V, R
θ
JA
= 50
o
C/W
HUF76121SK8
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76121D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3ST 功能描述:MOSFET USE 512-FDD6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121P3 功能描述:MOSFET 47a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76121S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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