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參數(shù)資料
| 型號： | HUF76129D3ST |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-252AA |
| 中文描述： | 20 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 108K |
| 代理商： | HUF76129D3ST |
5
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
2
3
4
5
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
20
40
60
I
D
150
o
C
-40
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
80
V
GS
= 3.5V
0
20
40
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
60
I
D
,
V
GS
= 3V
80
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4V
V
GS
= 5V
V
GS
= 10V
V
GS
= 4.5V
15
20
30
10
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
6
10
8
I
D
= 56A
I
D
= 35A
I
D
= 20A
r
D
,
O
)
25
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
1.6
N
T
J
, JUNCTION TEMPERATURE (
C)
O1.4
-60
-0
60
120
180
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 56A
-60
0
60
120
0.6
0.7
1.1
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
180
0.9
0.8
1.0
1.15
1.10
1.00
0.95
0.90
-60
0
60
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
180
1.05
HUF76129P3, HUF76129S3S
相關PDF資料 |
PDF描述 |
|---|---|
| HUF76129D3 | 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76129D3S | 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76129P3 | 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76129S3S | 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76131SK8 | 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76129P3 | 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76129S3 | 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76129S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76129S3ST | 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76129S3STK | 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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