參數(shù)資料
型號： HUF76129D3ST
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-252AA
中文描述： 20 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 6/10頁
文件大?。?/td> 108K
代理商： HUF76129D3ST
6
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes 7254 and 7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Test Circuits and Waveforms
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
C
OSS
2000
1200
0
0
5
15
25
C 1600
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
800
30
400
C
ISS
C
RSS
10
20
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
10
8
6
4
0
V
G
,
V
DD
= 15V
2
30
40
0
Q
g
, GATE CHARGE (nC)
10
I
D
= 56A
I
D
= 35A
I
D
= 20A
WAVEFORMS IN
DESCENDING ORDER:
20
100
20
30
40
50
0
400
300
200
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
t
d(OFF)
t
d(ON)
t
r
t
f
V
GS
= 4.5V, V
DD
= 15V, I
D
= 34A, R
L
= 0.441
0
150
20
30
40
50
300
250
200
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
t
d(OFF)
t
d(ON)
t
r
t
f
V
GS
= 10V, V
DD
= 15V, I
D
= 56A, R
L
= 0.268
50
100
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
HUF76129P3, HUF76129S3S
相關(guān)PDF資料
PDF描述
HUF76129D3 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76129D3S 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76129P3 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76129S3S 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76131SK8 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76129P3 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3ST 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3STK 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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