參數(shù)資料
型號： HUF76143S3S
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： XTAL MTL SMT HC49/USM
中文描述： 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 4/10頁
文件大?。?/td> 109K
代理商： HUF76143S3S
6-169
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
Typical Performance Curves
(Continued)
0.01
0.1
1
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Z
θ
J
,
T
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
t, RECTANGULAR PULSE DURATION (s)
V
GS
= 5V
50
100
1000
2000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I = I
25
150 - T
C
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
D
,
t, PULSE WIDTH (s)
T
= 25
o
C
1
10
100
1000
1
10
100
T
J
= MAX RATED
T
C
= 25
o
C
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
BV
DSS MAX
= 30V
AREA MAY BE
10
0.001
100
0.01
0.1
1
10
100
500
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
HUF76143P3, HUF76143S3S
相關(guān)PDF資料
PDF描述
HUF76143P3 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76143S3S 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76143P3 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76407DK8 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
HUF76407DK8 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76143S3ST 功能描述:MOSFET USE 512-FDB8874 Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76145P3 功能描述:MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76145S3 功能描述:MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76145S3S 功能描述:MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76145S3ST 功能描述:MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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