參數(shù)資料
型號： HUF76143S3S
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： XTAL MTL SMT HC49/USM
中文描述： 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 5/10頁
文件大小： 109K
代理商： HUF76143S3S
6-170
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. SOURCE TO DRAIN ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
50
100
150
200
0
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
-40
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
150
o
C
0
50
100
150
200
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 3V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
3
6
9
2
15
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 75A
I
D
= 50A
I
D
= 25A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
r
D
,
O
)
0.8
1.0
1.2
1.4
1.6
-60
0
60
120
180
0.7
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
0.6
0.8
1.0
1.2
-60
0
60
120
180
0.5
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
1.0
1.1
1.2
-60
0
60
120
180
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
HUF76143P3, HUF76143S3S
相關(guān)PDF資料
PDF描述
HUF76143P3 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76143S3S 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76143P3 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76143S3ST 功能描述:MOSFET USE 512-FDB8874 Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76145P3 功能描述:MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76145S3 功能描述:MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76145S3S 功能描述:MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76145S3ST 功能描述:MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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