參數(shù)資料
型號: HUF76407D3ST
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA
中文描述: 12 A, 60 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù): 8/12頁
文件大?。?/td> 375K
代理商: HUF76407D3ST
8
The transient thermal impedance (Z
θ
JA
) is also effected by
varied top copper board area. Figure 24 shows the effect of
copper pad area on single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package. Therefore,
CTHERM1 through CTHERM5 and RTHERM1 through
RTHERM5 remain constant for each of the thermal models. A
listing of the model component values is available in Table 1.
0
40
80
120
160
10
-1
10
0
10
1
10
2
10
3
FIGURE 24. THERMAL RESISTANCE vs MOUNTING PAD AREA
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
I
o
C
COPPER BOARD AREA - DESCENDING ORDER
0.020 in
2
0.140 in
2
0.257 in
2
0.380 in
2
0.493 in
2
HUF76407DK8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76407DK8 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
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HUF76407DK8T_R4810 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76407DK8TR4810 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76407P3 功能描述:MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube