參數(shù)資料
型號： HUF76407DK8
廠商： INTERSIL CORP
元件分類： 小信號晶體管
英文描述： 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
文件頁數(shù)： 2/12頁
文件大小： 375K
代理商： HUF76407DK8
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
I
D
= 250
μ
A, V
GS
= 0V , T
A
= -40
o
C (Figure 12)
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
A
= 150
o
C
V
GS
=
±
16V
60
-
-
V
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
I
D
= 3.8A, V
GS
= 10V (Figures 9, 10)
I
D
= 1.0A, V
GS
= 5V (Figure 9)
I
D
= 1.0A, V
GS
= 4.5V (Figure 9)
1
-
3
V
Drain to Source On Resistance
-
0.075
0.090
-
0.088
0.105
-
0.092
0.110
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Ambi-
ent
R
θ
JA
Pad Area = 0.76 in
2
(490.3 mm
2
) (Note 2)
Pad Area = 0.027 in
2
(17.4 mm
2
) (Figure 23)
Pad Area = 0.006 in
2
(3.87 mm
2
) (Figure 23)
-
-
50
o
C/W
o
C/W
o
C/W
-
-
191
-
-
228
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 1.0A
V
GS
=
4.5V, R
GS
= 27
(Figures 15, 21, 22)
-
-
57
ns
Turn-On Delay Time
-
8
-
ns
Rise Time
-
30
-
ns
Turn-Off Delay Time
-
25
-
ns
Fall Time
-
25
-
ns
Turn-Off Time
-
-
75
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 3.8A
V
GS
=
10V,
R
GS
= 30
(Figures 16, 21, 22)
-
-
24
ns
Turn-On Delay Time
-
5
-
ns
Rise Time
-
11
-
ns
Turn-Off Delay Time
-
46
-
ns
Fall Time
-
31
-
ns
Turn-Off Time
-
-
116
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V,
I
D
= 1.0A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
9.4
11.2
nC
Gate Charge at 5V
-
5.3
6.4
nC
Threshold Gate Charge
-
0.42
0.5
nC
Gate to Source Gate Charge
-
1.05
-
nC
Reverse Transfer Capacitance
-
2.4
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
330
-
pF
Output Capacitance
-
100
-
pF
Reverse Transfer Capacitance
-
18
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 3.8A
I
SD
= 1.0A
I
SD
= 1.0A, dI
SD
/dt = 100A/
μ
s
I
SD
= 1.0A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.00
V
Reverse Recovery Time
t
rr
-
-
48
ns
Reverse Recovered Charge
Q
RR
-
-
89
nC
HUF76407DK8
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相關代理商/技術參數(shù)
參數(shù)描述
HUF76407DK8T 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76407DK8T_R4810 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76407DK8TR4810 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76407P3 功能描述:MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76407P3_Q 功能描述:MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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