參數(shù)資料
型號(hào)： HUF76429S3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 47 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 4/9頁
文件大?。?/td> 332K
代理商： HUF76429S3S
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
10
100
300
1
1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
DS(ON)
LIMITED BY r
OPERATION IN THIS
10
100
0.001
0.01
0.1
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
50
0
10
20
30
40
1.5
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.5
3
3.5
4
I
D
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= -55
o
C
50
0
10
20
30
40
0
1
2
3
4
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
I
D
= 22A
10
20
30
40
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 44A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 47A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
160
HUF76429P3, HUF76429S3S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76429S3ST 功能描述:MOSFET 44a 60V 0.025 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76429S3ST_Q 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76432P3 功能描述:MOSFET 55a 60V 0.019Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76432S3S 功能描述:MOSFET 55a 60V 0.019 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76432S3ST 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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