參數(shù)資料
型號: HUF76429S3S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述: 47 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 5/9頁
文件大?。?/td> 332K
代理商: HUF76429S3S
5
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.4
0.8
1.0
1.2
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.6
160
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
160
30
100
1000
3000
0.1
1.0
10
60
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
10
20
30
40
V
G
,
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 44A
I
D
= 22A
WAVEFORMS IN
DESCENDING ORDER:
5
15
25
35
150
300
600
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 30V, I
D
= 30A
t
r
t
f
t
d(ON)
t
d(OFF)
450
100
200
250
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 30V, I
D
= 47A
t
d(OFF)
t
r
t
d(ON)
t
f
50
150
HUF76429P3, HUF76429S3S
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