參數(shù)資料
型號(hào)： HUF76633S3S
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(38A, 100V, 0.036Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
中文描述： 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù)： 4/9頁(yè)
文件大?。?/td> 337K
代理商： HUF76633S3S
4
HUF76633P3, HUF76633S3S
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
1
10
100
200
1
300
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
0.001
0.01
0.1
1
10
10
100
1
500
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
20
40
60
80
1.5
2.0
2.5
3.0
3.5
4.0
0
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
20
40
60
80
0
1
2
3
4
5
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
30
35
40
45
50
2
4
6
8
10
25
I
D
= 15A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 39A
r
D
,
O
)
I
D
= 27A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
0.5
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 39A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76633S3ST 功能描述:MOSFET 38a 100V 0.036 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76633S3ST_F085 功能描述:MOSFET N-Channel Logic Level UltraFET Power MOSFET 100V, 39A, 35m RoHS:否 制造商:Fairchild Semiconductor 晶體管極性: 汲極/源極擊穿電壓: 閘/源擊穿電壓: 漏極連續(xù)電流: 電阻汲極/源極 RDS（導(dǎo)通）: 配置: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel
HUF76633S3ST_R4884 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF766393ST 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76639P3 功能描述:MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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