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參數(shù)資料
| 型號(hào)： | HY27US16561M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| 中文描述： | 片256Mbit（32Mx8bit / 16Mx16bit）NAND閃存 |
| 文件頁(yè)數(shù)： | 16/44頁(yè) |
| 文件大?。?/td> | 733K |
| 代理商： | HY27US16561M |
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Rev 0.7 / Oct. 2004
16
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Figure 12. Sequential Row Read Operation
Figure 13. Sequential Row Read Block Diagrams
Busy
Busy
Busy
tBLBH1
(Read Busy time)
tBLBH1
tBLBH1
Address Inputs
I/O
00h/
01h/50h
1st
Page Output
2nd
Page Output
Nth
Page Output
Command
Code
RB
Read A Command, x8 Devices
Block
Read A Command, x16 Devices
Read B Command, x8 Devices
Read C Command, x8/x16 Devices
Area A
(1st half Page)
Area C
(Spare)
Area B
(2nd half
Page)
Area A
(1st half Page)
Area B
(2nd half
Page)
Area C
(Spare)
Area C
(50h)
Area A
(main area)
Area A
Area C
(Spare)
Area A/B
1st Page
2nd Page
Nth Page
Block
Block
Block
1st Page
2nd Page
Nth Page
1st Page
2nd Page
Nth Page
1st Page
2nd Page
Nth Page
Note : GND input=L, 00h Command
Note : GND input=L, 01h Command
Note : GND input=L, 00h Command
Note : GND input=L, 50h Command
相關(guān)PDF資料 |
PDF描述 |
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| HY27US561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SS16561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27US08561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27US561M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27USXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY29DL162 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16M(X8/X16)|3.0V DUAL BANK|70|NOR FLASH - 16M |
| HY29DL162BF-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
| HY29DL162BF-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
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